Infineon FF750R17ME7DPB11BPSA1, P-Channel Dual IGBT, 650 A 1700 V AG-ECONOD, Through Hole

RS Stock No.: 351-921Brand: InfineonManufacturers Part No.: FF750R17ME7DPB11BPSA1
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Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

650 A

Maximum Collector Emitter Voltage

1700 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

20 mW

Number of Transistors

2

Configuration

Dual

Package Type

AG-ECONOD

Mounting Type

Through Hole

Channel Type

P

Country of Origin

Austria

Stock information temporarily unavailable.

P.O.A.

Infineon FF750R17ME7DPB11BPSA1, P-Channel Dual IGBT, 650 A 1700 V AG-ECONOD, Through Hole

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Infineon FF750R17ME7DPB11BPSA1, P-Channel Dual IGBT, 650 A 1700 V AG-ECONOD, Through Hole
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

650 A

Maximum Collector Emitter Voltage

1700 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

20 mW

Number of Transistors

2

Configuration

Dual

Package Type

AG-ECONOD

Mounting Type

Through Hole

Channel Type

P

Country of Origin

Austria