Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263

RS Stock No.: 226-6062Brand: InfineonManufacturers Part No.: IGB50N65S5ATMA1
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Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

270 W

Number of Transistors

1

Package Type

PG-TO263

Configuration

Single

Channel Type

N

Pin Count

3

Transistor Configuration

Single

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P.O.A.

Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263

1000

Available in multiples of 1000
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

P.O.A.

Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000P.O.A.
2000P.O.A.
3000P.O.A.
4000P.O.A.
5000P.O.A.
6000P.O.A.
7000P.O.A.
8000P.O.A.
9000P.O.A.
10000P.O.A.
11000P.O.A.
12000P.O.A.
13000P.O.A.
14000P.O.A.
15000P.O.A.

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

270 W

Number of Transistors

1

Package Type

PG-TO263

Configuration

Single

Channel Type

N

Pin Count

3

Transistor Configuration

Single