Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Maximum Power Dissipation
188 W
Number of Transistors
1
Package Type
TO-263
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
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Please check again later.
Stock information temporarily unavailable.
P.O.A.
Infineon IKB30N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin TO-263, Through Hole
1000
P.O.A.
Infineon IKB30N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin TO-263, Through Hole
Stock information temporarily unavailable.
1000
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Maximum Power Dissipation
188 W
Number of Transistors
1
Package Type
TO-263
Mounting Type
Through Hole
Channel Type
N
Pin Count
3