Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 162-3285Brand: InfineonManufacturers Part No.: IKQ75N120CT2XKSA1
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Technical documents

Specifications

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

938 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Switching Speed

20kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

4856pF

Maximum Operating Temperature

+175 °C

Energy Rating

10.8mJ

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P.O.A.

Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole

P.O.A.

Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

Technical documents

Specifications

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

938 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Switching Speed

20kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

4856pF

Maximum Operating Temperature

+175 °C

Energy Rating

10.8mJ