Infineon IKZ75N65EH5XKSA1, P-Channel IGBT, 90 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 162-3291Brand: InfineonManufacturers Part No.: IKZ75N65EH5XKSA1
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Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

395 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

100kHz

Transistor Configuration

Single

Dimensions

16.3 x 5.21 x 21.1mm

Maximum Operating Temperature

+175 °C

Energy Rating

1.11mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

4300pF

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P.O.A.

Infineon IKZ75N65EH5XKSA1, P-Channel IGBT, 90 A 650 V, 4-Pin TO-247, Through Hole

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

P.O.A.

Infineon IKZ75N65EH5XKSA1, P-Channel IGBT, 90 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

395 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

100kHz

Transistor Configuration

Single

Dimensions

16.3 x 5.21 x 21.1mm

Maximum Operating Temperature

+175 °C

Energy Rating

1.11mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

4300pF