Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB025N10N3GATMA1

RS Stock No.: 754-5421Brand: InfineonManufacturers Part No.: IPB025N10N3GATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK-7

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

155 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB025N10N3GATMA1
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P.O.A.

Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB025N10N3GATMA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

You may be interested in

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK-7

Series

OptiMOS™ 3

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

155 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

You may be interested in