Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1

RS Stock No.: 218-3043Brand: InfineonManufacturers Part No.: IPD35N10S3L26ATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

P.O.A.

Each (In a Pack of 15) (ex VAT)

Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1
Select packaging type

P.O.A.

Each (In a Pack of 15) (ex VAT)

Infineon OptiMOS™-T N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si