Infineon HEXFET Silicon N-Channel MOSFET, 16 A, 110 V, 3-Pin DPAK IRFR3910TRLPBF

RS Stock No.: 222-4752Brand: InfineonManufacturers Part No.: IRFR3910TRLPBF
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

110 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

P.O.A.

Each (On a Reel of 3000) (ex VAT)

Infineon HEXFET Silicon N-Channel MOSFET, 16 A, 110 V, 3-Pin DPAK IRFR3910TRLPBF

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

Each (On a Reel of 3000) (ex VAT)

Infineon HEXFET Silicon N-Channel MOSFET, 16 A, 110 V, 3-Pin DPAK IRFR3910TRLPBF

Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

110 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1