Infineon NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S11TFI020

RS Stock No.: 171-1490Brand: InfineonManufacturers Part No.: S29GL512S11TFI020
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Technical documents

Specifications

Memory Size

512Mbit

Interface Type

CFI, Parallel

Package Type

TSOP

Pin Count

56

Organisation

32M x 16 bit

Mounting Type

Surface Mount

Cell Type

NOR

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Dimensions

18.5 x 14.1 x 1.05mm

Number of Words

32M

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+85 °C

Maximum Random Access Time

110ns

Number of Bits per Word

16bit

Country of Origin

United States

Product details

Parallel NOR Flash Memory, Cypress Semiconductor

High performance
Fast random-access and high bandwidth

Flash Memory

FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

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P.O.A.

Infineon NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S11TFI020

P.O.A.

Infineon NOR 512Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL512S11TFI020
Stock information temporarily unavailable.

Stock information temporarily unavailable.

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Technical documents

Specifications

Memory Size

512Mbit

Interface Type

CFI, Parallel

Package Type

TSOP

Pin Count

56

Organisation

32M x 16 bit

Mounting Type

Surface Mount

Cell Type

NOR

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Dimensions

18.5 x 14.1 x 1.05mm

Number of Words

32M

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+85 °C

Maximum Random Access Time

110ns

Number of Bits per Word

16bit

Country of Origin

United States

Product details

Parallel NOR Flash Memory, Cypress Semiconductor

High performance
Fast random-access and high bandwidth

Flash Memory

FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.