Infineon 2Gbit CFI Flash Memory 64-Pin FPBGA, S70GL02GS11FHI010

RS Stock No.: 124-2678Brand: InfineonManufacturers Part No.: S70GL02GS11FHI010
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Technical documents

Specifications

Memory Size

2Gbit

Interface Type

CFI

Package Type

FPBGA

Pin Count

64

Organisation

128M x 16 bit, 256M x 8 bit

Mounting Type

Surface Mount

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Dimensions

13 x 11 x 1mm

Maximum Random Access Time

110ns

Number of Words

128M, 256M

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8, 16

Maximum Operating Temperature

+85 °C

Product details

Serial-SPI NOR Flash Memory, Cypress Semiconductor

High performance
Low pin-count Quad SPI (Serial Peripheral Interface)

Flash Memory

FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

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P.O.A.

Infineon 2Gbit CFI Flash Memory 64-Pin FPBGA, S70GL02GS11FHI010
Select packaging type

P.O.A.

Infineon 2Gbit CFI Flash Memory 64-Pin FPBGA, S70GL02GS11FHI010
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Memory Size

2Gbit

Interface Type

CFI

Package Type

FPBGA

Pin Count

64

Organisation

128M x 16 bit, 256M x 8 bit

Mounting Type

Surface Mount

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Dimensions

13 x 11 x 1mm

Maximum Random Access Time

110ns

Number of Words

128M, 256M

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8, 16

Maximum Operating Temperature

+85 °C

Product details

Serial-SPI NOR Flash Memory, Cypress Semiconductor

High performance
Low pin-count Quad SPI (Serial Peripheral Interface)

Flash Memory

FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.