IXYS MDI75-12A3, Type N-Channel Single IGBT Module, 7-Pin Y4-M5

RS Stock No.: 168-4497Brand: IXYSManufacturers Part No.: MDI75-12A3
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Technical documents

Specifications

Brand

IXYS

Product Type

IGBT Module

Configuration

Single

Package Type

Y4-M5

Channel Type

Type N

Pin Count

7

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

34 mm

Length

94mm

Height

30mm

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

View all in IGBTs

Stock information temporarily unavailable.

P.O.A.

IXYS MDI75-12A3, Type N-Channel Single IGBT Module, 7-Pin Y4-M5

1

Available in multiples of 6
1P.O.A.
7P.O.A.
13P.O.A.
19P.O.A.
25P.O.A.
31P.O.A.
37P.O.A.
43P.O.A.
49P.O.A.
55P.O.A.
61P.O.A.
67P.O.A.
73P.O.A.
79P.O.A.
85P.O.A.

P.O.A.

IXYS MDI75-12A3, Type N-Channel Single IGBT Module, 7-Pin Y4-M5

Stock information temporarily unavailable.

1

Available in multiples of 6
1P.O.A.
7P.O.A.
13P.O.A.
19P.O.A.
25P.O.A.
31P.O.A.
37P.O.A.
43P.O.A.
49P.O.A.
55P.O.A.
61P.O.A.
67P.O.A.
73P.O.A.
79P.O.A.
85P.O.A.

Technical documents

Specifications

Brand

IXYS

Product Type

IGBT Module

Configuration

Single

Package Type

Y4-M5

Channel Type

Type N

Pin Count

7

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

34 mm

Length

94mm

Height

30mm

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.