IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

RS Stock No.: 146-1696Brand: IXYSManufacturers Part No.: MID200-12A4
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Technical documents

Specifications

Brand

IXYS

Maximum Continuous Collector Current

270 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y3 DCB

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Dimensions

110 x 62 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount
Stock information temporarily unavailable.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

IXYS

Maximum Continuous Collector Current

270 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y3 DCB

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Transistor Configuration

Single

Dimensions

110 x 62 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.