IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount

RS Stock No.: 146-1703Brand: IXYSManufacturers Part No.: MIXA450PF1200TSF
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Technical documents

Specifications

Brand

IXYS

Maximum Continuous Collector Current

650 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

2.1 kW

Package Type

SimBus F

Configuration

Dual

Mounting Type

PCB Mount

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Dimensions

152 x 62 x 17mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Country of Origin

Germany

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount

3

Available in multiples of 3
3P.O.A.
6P.O.A.
9P.O.A.
12P.O.A.
15P.O.A.
18P.O.A.
21P.O.A.
24P.O.A.
27P.O.A.
30P.O.A.
33P.O.A.
36P.O.A.
39P.O.A.
42P.O.A.
45P.O.A.

P.O.A.

IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount
Stock information temporarily unavailable.

3

Available in multiples of 3
3P.O.A.
6P.O.A.
9P.O.A.
12P.O.A.
15P.O.A.
18P.O.A.
21P.O.A.
24P.O.A.
27P.O.A.
30P.O.A.
33P.O.A.
36P.O.A.
39P.O.A.
42P.O.A.
45P.O.A.

Technical documents

Specifications

Brand

IXYS

Maximum Continuous Collector Current

650 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

2.1 kW

Package Type

SimBus F

Configuration

Dual

Mounting Type

PCB Mount

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Dimensions

152 x 62 x 17mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Country of Origin

Germany

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.