IXYS MUBW50-06A7 3 Phase Bridge IGBT Module, 75 A 600 V, 23-Pin, PCB Mount

RS Stock No.: 146-1698Brand: IXYSManufacturers Part No.: MUBW50-06A7
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Technical documents

Specifications

Brand

IXYS

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

23

Transistor Configuration

3 Phase

Dimensions

107.5 x 45 x 17mm

Maximum Operating Temperature

+125 °C

Minimum Operating Temperature

-40 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

IXYS MUBW50-06A7 3 Phase Bridge IGBT Module, 75 A 600 V, 23-Pin, PCB Mount

P.O.A.

IXYS MUBW50-06A7 3 Phase Bridge IGBT Module, 75 A 600 V, 23-Pin, PCB Mount
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

IXYS

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

23

Transistor Configuration

3 Phase

Dimensions

107.5 x 45 x 17mm

Maximum Operating Temperature

+125 °C

Minimum Operating Temperature

-40 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.