N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 Microchip 2N7000-G

RS Stock No.: 177-9760Brand: MicrochipManufacturers Part No.: 2N7000-G
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.08mm

Width

4.06mm

Series

2N7000

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Height

5.33mm

Country of Origin

Taiwan, Province Of China

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 Microchip 2N7000-G
Select packaging type

P.O.A.

N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 Microchip 2N7000-G
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.08mm

Width

4.06mm

Series

2N7000

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Height

5.33mm

Country of Origin

Taiwan, Province Of China