N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip LND01K1-G

RS Stock No.: 912-5259Brand: MicrochipManufacturers Part No.: LND01K1-G
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

330 mA

Maximum Drain Source Voltage

9 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Depletion

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +0.6 V

Number of Elements per Chip

1

Maximum Operating Temperature

+125 °C

Length

3.05mm

Width

1.75mm

Transistor Material

Si

Minimum Operating Temperature

-25 °C

Height

1.3mm

Product details

LND01 N-Channel MOSFET Transistors

The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Features

Bi-directional
Low On-Resistance
Low Input Capacitance
Fast Switching Speeds
High Input Impedance and High Gain
Low Power Drive Requirement
Ease of Parallel Operation

MOSFET Transistors, Microchip

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip LND01K1-G
Select packaging type

P.O.A.

N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip LND01K1-G
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

330 mA

Maximum Drain Source Voltage

9 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Depletion

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +0.6 V

Number of Elements per Chip

1

Maximum Operating Temperature

+125 °C

Length

3.05mm

Width

1.75mm

Transistor Material

Si

Minimum Operating Temperature

-25 °C

Height

1.3mm

Product details

LND01 N-Channel MOSFET Transistors

The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Features

Bi-directional
Low On-Resistance
Low Input Capacitance
Fast Switching Speeds
High Input Impedance and High Gain
Low Power Drive Requirement
Ease of Parallel Operation

MOSFET Transistors, Microchip