Dual-use

Micron NOR 1 Gbyte Parallel Flash Memory 56-Pin TSOP, JS28F00AM29EWHA

RS Stock No.: 777-5168Brand: MicronManufacturers Part No.: JS28F00AM29EWHA
brand-logo
View all in Flash Memory

Technical documents

Specifications

Brand

Micron

Memory Size

1 Gbyte

Interface Type

Parallel

Package Type

TSOP

Pin Count

56

Organisation

12M x 8 bit, 64M x 16 bit

Mounting Type

Surface Mount

Cell Type

NOR

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Block Organisation

Symmetrical

Length

18.4mm

Height

1mm

Width

14mm

Dimensions

18.4 x 14 x 1mm

Maximum Random Access Time

110ns

Number of Words

128M, 64M

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8/16bit

Maximum Operating Temperature

+85 °C

Country of Origin

China

Product details

Flash Memory, Micron

Flash Memory

FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

Micron NOR 1 Gbyte Parallel Flash Memory 56-Pin TSOP, JS28F00AM29EWHA

P.O.A.

Micron NOR 1 Gbyte Parallel Flash Memory 56-Pin TSOP, JS28F00AM29EWHA
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Micron

Memory Size

1 Gbyte

Interface Type

Parallel

Package Type

TSOP

Pin Count

56

Organisation

12M x 8 bit, 64M x 16 bit

Mounting Type

Surface Mount

Cell Type

NOR

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Block Organisation

Symmetrical

Length

18.4mm

Height

1mm

Width

14mm

Dimensions

18.4 x 14 x 1mm

Maximum Random Access Time

110ns

Number of Words

128M, 64M

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8/16bit

Maximum Operating Temperature

+85 °C

Country of Origin

China

Product details

Flash Memory, Micron

Flash Memory

FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.