Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
110
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
Small Signal NPN Transistors
Bipolar Transistors, Nexperia
P.O.A.
200
P.O.A.
200
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Please check again later.
quantity | Unit price |
---|---|
200 - 200 | P.O.A. |
400 - 800 | P.O.A. |
1000 - 1800 | P.O.A. |
2000 - 3800 | P.O.A. |
4000+ | P.O.A. |
Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
110
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details