Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SSMini
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
0.6 x 1.7 x 1.3mm
Maximum Operating Temperature
+150 °C
Country of Origin
Hong Kong
Product details
Dual NPN/PNP Transistors, Nexperia
Bipolar Transistors, Nexperia
P.O.A.
50
P.O.A.
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 50 - 50 | P.O.A. |
| 100 - 200 | P.O.A. |
| 250 - 450 | P.O.A. |
| 500 - 950 | P.O.A. |
| 1000+ | P.O.A. |
Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN/PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SSMini
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
0.6 x 1.7 x 1.3mm
Maximum Operating Temperature
+150 °C
Country of Origin
Hong Kong
Product details
