Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-45 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
125
Transistor Configuration
Single
Maximum Collector Base Voltage
-50 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1mm
Country of Origin
China
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-45 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
125
Transistor Configuration
Single
Maximum Collector Base Voltage
-50 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3 x 1.4 x 1mm
Country of Origin
China