Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
200
Transistor Configuration
Current Mirror
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Pin Count
6
Number of Elements per Chip
2
Dimensions
2.2 x 1.35 x 1.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
General Purpose NPN Transistors, Nexperia
Bipolar Transistors, Nexperia
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
200
Transistor Configuration
Current Mirror
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Pin Count
6
Number of Elements per Chip
2
Dimensions
2.2 x 1.35 x 1.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details