Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-143B
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Transistor Configuration
Current Mirror
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
1 x 3 x 1.4mm
Country of Origin
China
Product details
Small Signal PNP Transistors, Nexperia
Bipolar Transistors, Nexperia
P.O.A.
50
P.O.A.
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 50 - 50 | P.O.A. |
| 100 - 200 | P.O.A. |
| 250 - 450 | P.O.A. |
| 500 - 950 | P.O.A. |
| 1000+ | P.O.A. |
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-143B
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Transistor Configuration
Current Mirror
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
1 x 3 x 1.4mm
Country of Origin
China
Product details
