P-Channel MOSFET, 520 mA, 30 V, 3-Pin SOT-23 Nexperia BSH202,215

RS Stock No.: 780-5360Brand: NexperiaManufacturers Part No.: BSH202,215
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Technical documents

Specifications

Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

520 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.35 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

2.9 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

P.O.A.

P-Channel MOSFET, 520 mA, 30 V, 3-Pin SOT-23 Nexperia BSH202,215
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 25
1P.O.A.
26P.O.A.
51P.O.A.
76P.O.A.
101P.O.A.
126P.O.A.
151P.O.A.
176P.O.A.
201P.O.A.
226P.O.A.
251P.O.A.
276P.O.A.
301P.O.A.
326P.O.A.
351P.O.A.

P.O.A.

P-Channel MOSFET, 520 mA, 30 V, 3-Pin SOT-23 Nexperia BSH202,215

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 25
1P.O.A.
26P.O.A.
51P.O.A.
76P.O.A.
101P.O.A.
126P.O.A.
151P.O.A.
176P.O.A.
201P.O.A.
226P.O.A.
251P.O.A.
276P.O.A.
301P.O.A.
326P.O.A.
351P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

520 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.35 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

2.9 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors