Nexperia PBSS305PZ,135 PNP Transistor, 4.5 A, 80 V, 4-Pin SOT-223
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
4.5 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.7 x 6.7 x 3.7mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
P.O.A.
Standard
20
P.O.A.
Stock information temporarily unavailable.
Standard
20
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 20 - 80 | P.O.A. |
| 100 - 180 | P.O.A. |
| 200+ | P.O.A. |
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
4.5 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.7 x 6.7 x 3.7mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.