Nexperia PBSS4041PT,215 PNP Transistor, 2.7 A, 60 V, 3-Pin SOT-23

RS Stock No.: 781-6776Brand: NexperiaManufacturers Part No.: PBSS4041PT,215
brand-logo
View all in Bipolar Transistors

Technical documents

Specifications

Brand

Nexperia

Transistor Type

PNP

Maximum DC Collector Current

2.7 A

Maximum Collector Emitter Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Maximum Power Dissipation

1.1 W

Transistor Configuration

Single

Maximum Collector Base Voltage

-60 V

Maximum Emitter Base Voltage

-5 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

3 x 1.4 x 1.1mm

Country of Origin

China

Product details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

P.O.A.

Nexperia PBSS4041PT,215 PNP Transistor, 2.7 A, 60 V, 3-Pin SOT-23
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 50
1P.O.A.
51P.O.A.
101P.O.A.
151P.O.A.
201P.O.A.
251P.O.A.
301P.O.A.
351P.O.A.
401P.O.A.
451P.O.A.
501P.O.A.
551P.O.A.
601P.O.A.
651P.O.A.
701P.O.A.

P.O.A.

Nexperia PBSS4041PT,215 PNP Transistor, 2.7 A, 60 V, 3-Pin SOT-23

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 50
1P.O.A.
51P.O.A.
101P.O.A.
151P.O.A.
201P.O.A.
251P.O.A.
301P.O.A.
351P.O.A.
401P.O.A.
451P.O.A.
501P.O.A.
551P.O.A.
601P.O.A.
651P.O.A.
701P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Nexperia

Transistor Type

PNP

Maximum DC Collector Current

2.7 A

Maximum Collector Emitter Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Maximum Power Dissipation

1.1 W

Transistor Configuration

Single

Maximum Collector Base Voltage

-60 V

Maximum Emitter Base Voltage

-5 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

3 x 1.4 x 1.1mm

Country of Origin

China

Product details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia