Nexperia PBSS5350T,215 PNP Transistor, -2 A, -50 V, 3-Pin SOT-23

RS Stock No.: 166-0519Brand: NexperiaManufacturers Part No.: PBSS5350T,215
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Technical documents

Specifications

Transistor Type

PNP

Maximum DC Collector Current

-2 A

Maximum Collector Emitter Voltage

-50 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

1.2 W

Minimum DC Current Gain

200

Transistor Configuration

Single

Maximum Collector Base Voltage

50 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

100 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+150 °C

Product details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Stock information temporarily unavailable.

P.O.A.

Nexperia PBSS5350T,215 PNP Transistor, -2 A, -50 V, 3-Pin SOT-23

P.O.A.

Nexperia PBSS5350T,215 PNP Transistor, -2 A, -50 V, 3-Pin SOT-23
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Transistor Type

PNP

Maximum DC Collector Current

-2 A

Maximum Collector Emitter Voltage

-50 V

Package Type

SOT-23 (TO-236AB)

Mounting Type

Surface Mount

Maximum Power Dissipation

1.2 W

Minimum DC Current Gain

200

Transistor Configuration

Single

Maximum Collector Base Voltage

50 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

100 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 3 x 1.4mm

Maximum Operating Temperature

+150 °C

Product details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia