Nexperia PBSS5540Z,115 PNP Transistor, -5 A, -40 V, 4-Pin SOT-223
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-40 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.7 x 6.7 x 3.7mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
P.O.A.
Production pack (Reel)
50
P.O.A.
Stock information temporarily unavailable.
Production pack (Reel)
50
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 50 - 190 | P.O.A. |
| 200 - 490 | P.O.A. |
| 500 - 990 | P.O.A. |
| 1000+ | P.O.A. |
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-40 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
2 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.7 x 6.7 x 3.7mm
Country of Origin
China
Product details
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.