3 P-Channel MOSFET, -8.2 A, -12 V, 2-Pin WLCSP Nexperia PMCM6501VPEZ

RS Stock No.: 153-0756Brand: NexperiaManufacturers Part No.: PMCM6501VPEZ
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

-8.2 A

Maximum Drain Source Voltage

-12 V

Package Type

WLCSP

Mounting Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.9V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

12500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

8 V

Maximum Operating Temperature

+150 °C

Length

1.45mm

Typical Gate Charge @ Vgs

19.6 nC

Width

0.95mm

Number of Elements per Chip

3

Minimum Operating Temperature

-55 °C

Height

0.315mm

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P.O.A.

3 P-Channel MOSFET, -8.2 A, -12 V, 2-Pin WLCSP Nexperia PMCM6501VPEZ

P.O.A.

3 P-Channel MOSFET, -8.2 A, -12 V, 2-Pin WLCSP Nexperia PMCM6501VPEZ
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

-8.2 A

Maximum Drain Source Voltage

-12 V

Package Type

WLCSP

Mounting Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.9V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

12500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

8 V

Maximum Operating Temperature

+150 °C

Length

1.45mm

Typical Gate Charge @ Vgs

19.6 nC

Width

0.95mm

Number of Elements per Chip

3

Minimum Operating Temperature

-55 °C

Height

0.315mm