Technical documents
Specifications
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-143B
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details
RF Bipolar Transistors, NXP
Bipolar Transistors, NXP
Stock information temporarily unavailable.
Please check again later.
P.O.A.
10
P.O.A.
10
Buy in bulk
quantity | Unit price |
---|---|
10 - 40 | P.O.A. |
50 - 190 | P.O.A. |
200 - 490 | P.O.A. |
500 - 990 | P.O.A. |
1000+ | P.O.A. |
Technical documents
Specifications
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-143B
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details