NXP PMBFJ309,215 N-Channel JFET, 25 V, Idss 12 to 30mA, 3-Pin SOT-23

RS Stock No.: 179-1061Brand: NXPManufacturers Part No.: PMBFJ309,215
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Technical documents

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 30mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

NXP PMBFJ309,215 N-Channel JFET, 25 V, Idss 12 to 30mA, 3-Pin SOT-23

P.O.A.

NXP PMBFJ309,215 N-Channel JFET, 25 V, Idss 12 to 30mA, 3-Pin SOT-23
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 30mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.