NXP PRF957,115 NPN Transistor, 100 mA, 10 V, 3-Pin UMT

RS Stock No.: 626-3342Brand: NXPManufacturers Part No.: PRF957,115
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Technical documents

Specifications

Brand

NXP

Transistor Type

NPN

Maximum DC Collector Current

100 mA

Maximum Collector Emitter Voltage

10 V

Package Type

UMT

Mounting Type

Surface Mount

Maximum Power Dissipation

270 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

1.5 V

Maximum Operating Frequency

8500 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 2.2 x 1.35mm

Maximum Operating Temperature

+175 °C

Country of Origin

Malaysia

Product details

RF Bipolar Transistors, NXP

Bipolar Transistors, NXP

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P.O.A.

NXP PRF957,115 NPN Transistor, 100 mA, 10 V, 3-Pin UMT
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Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

NXP PRF957,115 NPN Transistor, 100 mA, 10 V, 3-Pin UMT
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Buy in bulk

quantityUnit price
10 - 40P.O.A.
50 - 190P.O.A.
200 - 490P.O.A.
500 - 990P.O.A.
1000+P.O.A.

Technical documents

Specifications

Brand

NXP

Transistor Type

NPN

Maximum DC Collector Current

100 mA

Maximum Collector Emitter Voltage

10 V

Package Type

UMT

Mounting Type

Surface Mount

Maximum Power Dissipation

270 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

1.5 V

Maximum Operating Frequency

8500 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

1 x 2.2 x 1.35mm

Maximum Operating Temperature

+175 °C

Country of Origin

Malaysia

Product details

RF Bipolar Transistors, NXP

Bipolar Transistors, NXP