Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
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P.O.A.
3000
P.O.A.
3000
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Country of Origin
China