onsemi BSR58 N-Channel JFET, 0.4 V, Idss 8 to 80mA, 3-Pin SOT-23

RS Stock No.: 166-2319Brand: onsemiManufacturers Part No.: BSR58
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

8 to 80mA

Maximum Drain Source Voltage

0.4 V

Maximum Gate Source Voltage

-40 V

Maximum Drain Gate Voltage

40V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.3 x 0.97mm

Height

0.97mm

Width

1.3mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

onsemi BSR58 N-Channel JFET, 0.4 V, Idss 8 to 80mA, 3-Pin SOT-23

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

onsemi BSR58 N-Channel JFET, 0.4 V, Idss 8 to 80mA, 3-Pin SOT-23
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

8 to 80mA

Maximum Drain Source Voltage

0.4 V

Maximum Gate Source Voltage

-40 V

Maximum Drain Gate Voltage

40V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.3 x 0.97mm

Height

0.97mm

Width

1.3mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.