N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220 onsemi FCP190N65S3

Brand

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

144 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Height

16.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China