N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181

RS Stock No.: 181-1857Brand: onsemiManufacturers Part No.: FDMS86181
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5.85mm

Width

5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

42 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

Philippines

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P.O.A.

N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181

P.O.A.

N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5.85mm

Width

5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

42 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

Philippines