onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

RS Stock No.: 178-4321Brand: onsemiManufacturers Part No.: FGH40T120SQDNL4
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Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

454 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

5000pF

Maximum Operating Temperature

+175 °C

Country of Origin

China

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P.O.A.

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

P.O.A.

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

454 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

5000pF

Maximum Operating Temperature

+175 °C

Country of Origin

China