ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220

RS Stock No.: 864-8950PBrand: ON SemiconductorManufacturers Part No.: FJP2160DTU
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Technical documents

Specifications

Brand

ON Semiconductor

Transistor Type

NPN

Maximum DC Collector Current

2 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

100 W

Minimum DC Current Gain

20

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+125 °C

Dimensions

9.9 x 4.5 x 15.95mm

Product details

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

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P.O.A.

ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220
Select packaging type

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Technical documents

Specifications

Brand

ON Semiconductor

Transistor Type

NPN

Maximum DC Collector Current

2 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

100 W

Minimum DC Current Gain

20

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+125 °C

Dimensions

9.9 x 4.5 x 15.95mm

Product details

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.