onsemi MMBF4393LG N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23

RS Stock No.: 864-7846Brand: onsemiManufacturers Part No.: MMBF4393LT1G
brand-logo
View all in JFETs

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

5 to 30mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

100 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

14pF

Source Gate On-Capacitance

14pF

Dimensions

3.04 x 1.4 x 1.01mm

Height

1.01mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

onsemi MMBF4393LG N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23
Select packaging type

P.O.A.

onsemi MMBF4393LG N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

5 to 30mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Configuration

Single

Transistor Configuration

Single

Maximum Drain Source Resistance

100 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

14pF

Source Gate On-Capacitance

14pF

Dimensions

3.04 x 1.4 x 1.01mm

Height

1.01mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.