onsemi MMBFJ110 N-Channel JFET, 15 V, Idss Min. 10mA, 3-Pin SOT-23

RS Stock No.: 806-4302PBrand: ON SemiconductorManufacturers Part No.: MMBFJ110
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Technical documents

Specifications

Channel Type

N

Idss Drain-Source Cut-off Current

min. 10mA

Maximum Drain Source Voltage

15 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

18 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

85pF

Source Gate On-Capacitance

85pF

Dimensions

2.92 x 1.4 x 0.94mm

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.94mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

onsemi MMBFJ110 N-Channel JFET, 15 V, Idss Min. 10mA, 3-Pin SOT-23
Select packaging type

P.O.A.

onsemi MMBFJ110 N-Channel JFET, 15 V, Idss Min. 10mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Channel Type

N

Idss Drain-Source Cut-off Current

min. 10mA

Maximum Drain Source Voltage

15 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

18 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Drain Gate On-Capacitance

85pF

Source Gate On-Capacitance

85pF

Dimensions

2.92 x 1.4 x 0.94mm

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.94mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.