onsemi NGTB40N120IHLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 773-7409Brand: ON SemiconductorManufacturers Part No.: NGTB40N120IHLWG
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Technical documents

Specifications

Brand

ON Semiconductor

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

260 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.08mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

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P.O.A.

onsemi NGTB40N120IHLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

onsemi NGTB40N120IHLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Technical documents

Specifications

Brand

ON Semiconductor

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

260 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.08mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C