onsemi NJD35N04G NPN Darlington Transistor, 4 A 350 V HFE:2000, 3-Pin DPAK

Brand

Transistor Type

NPN

Maximum Continuous Collector Current

4 A

Maximum Collector Emitter Voltage

350 V

Maximum Emitter Base Voltage

5 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

2000

Maximum Base Emitter Saturation Voltage

2 V

Maximum Collector Base Voltage

700 V

Maximum Collector Emitter Saturation Voltage

1.5 V

Maximum Collector Cut-off Current

250mA

Height

2.38mm

Width

7.49mm

Maximum Power Dissipation

45 W

Minimum Operating Temperature

-65 °C

Dimensions

6.73 x 7.49 x 2.38mm

Maximum Operating Temperature

+150 °C

Length

6.73mm

Country of Origin

Malaysia