N-Channel MOSFET, 210 A, 40 V, 5-Pin DFN onsemi NTMFS5H414NLT1G

RS Stock No.: 172-8984Brand: ON SemiconductorManufacturers Part No.: NTMFS5H414NLT1G
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

210 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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P.O.A.

N-Channel MOSFET, 210 A, 40 V, 5-Pin DFN onsemi NTMFS5H414NLT1G
Select packaging type

P.O.A.

N-Channel MOSFET, 210 A, 40 V, 5-Pin DFN onsemi NTMFS5H414NLT1G
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

210 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V