N-Channel MOSFET, 203 A, 80 V, 5-Pin DFN onsemi NTMFS6H800NT1G

Brand

Channel Type

N

Maximum Continuous Drain Current

203 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

3.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

85 nC @ 10 V

Width

5.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.1mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V