onsemi TF412SG N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883

RS Stock No.: 867-3287Brand: onsemiManufacturers Part No.: TF412ST5G
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-883

Pin Count

3

Drain Gate On-Capacitance

4pF

Source Gate On-Capacitance

4pF

Dimensions

1.08 x 0.68 x 0.41mm

Maximum Power Dissipation

100 mW

Maximum Operating Temperature

+150 °C

Length

1.08mm

Height

0.41mm

Width

0.68mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

onsemi TF412SG N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883
Select packaging type

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

onsemi TF412SG N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-883

Pin Count

3

Drain Gate On-Capacitance

4pF

Source Gate On-Capacitance

4pF

Dimensions

1.08 x 0.68 x 0.41mm

Maximum Power Dissipation

100 mW

Maximum Operating Temperature

+150 °C

Length

1.08mm

Height

0.41mm

Width

0.68mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.