Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
60 V dc
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.53 x 4.83 x 15.75mm
Country of Origin
China
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
60 V dc
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.53 x 4.83 x 15.75mm
Country of Origin
China