onsemi 2N6387G NPN Darlington Transistor, 10 A dc 60 V dc HFE:1000, 3-Pin TO-220

RS Stock No.: 186-7344Brand: onsemiManufacturers Part No.: 2N6387G
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Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

10 A dc

Maximum Collector Emitter Voltage

60 V dc

Maximum Emitter Base Voltage

5 V dc

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Collector Base Voltage

60 V dc

Maximum Collector Emitter Saturation Voltage

3 V dc

Length

10.53mm

Height

15.75mm

Width

4.83mm

Maximum Power Dissipation

65 W

Minimum Operating Temperature

-65 °C

Dimensions

10.53 x 4.83 x 15.75mm

Maximum Operating Temperature

+150 °C

Country of Origin

China

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P.O.A.

onsemi 2N6387G NPN Darlington Transistor, 10 A dc 60 V dc HFE:1000, 3-Pin TO-220

P.O.A.

onsemi 2N6387G NPN Darlington Transistor, 10 A dc 60 V dc HFE:1000, 3-Pin TO-220
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

10 A dc

Maximum Collector Emitter Voltage

60 V dc

Maximum Emitter Base Voltage

5 V dc

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Configuration

Single

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Collector Base Voltage

60 V dc

Maximum Collector Emitter Saturation Voltage

3 V dc

Length

10.53mm

Height

15.75mm

Width

4.83mm

Maximum Power Dissipation

65 W

Minimum Operating Temperature

-65 °C

Dimensions

10.53 x 4.83 x 15.75mm

Maximum Operating Temperature

+150 °C

Country of Origin

China