Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
PCP
Mounting Type
Surface Mount
Maximum Power Dissipation
1.3 W
Minimum DC Current Gain
140, 200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.5 x 2.5 x 1.5mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
1000
P.O.A.
1000
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
PCP
Mounting Type
Surface Mount
Maximum Power Dissipation
1.3 W
Minimum DC Current Gain
140, 200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.5 x 2.5 x 1.5mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.