onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount

RS Stock No.: 185-7972Brand: onsemiManufacturers Part No.: AFGB40T65SQDN
brand-logo
View all in IGBTs

Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

238 W

Number of Transistors

1

Package Type

D2PAK

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 9.65 x 4.58mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

2495pF

Maximum Operating Temperature

+175 °C

Energy Rating

22.3mJ

Automotive Standard

AEC-Q101

Country of Origin

China

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount

800

Available in multiples of 800
800P.O.A.
1600P.O.A.
2400P.O.A.
3200P.O.A.
4000P.O.A.
4800P.O.A.
5600P.O.A.
6400P.O.A.
7200P.O.A.
8000P.O.A.
8800P.O.A.
9600P.O.A.
10400P.O.A.
11200P.O.A.
12000P.O.A.

P.O.A.

onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount
Stock information temporarily unavailable.

800

Available in multiples of 800
800P.O.A.
1600P.O.A.
2400P.O.A.
3200P.O.A.
4000P.O.A.
4800P.O.A.
5600P.O.A.
6400P.O.A.
7200P.O.A.
8000P.O.A.
8800P.O.A.
9600P.O.A.
10400P.O.A.
11200P.O.A.
12000P.O.A.

Technical documents

Specifications

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

238 W

Number of Transistors

1

Package Type

D2PAK

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 9.65 x 4.58mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

2495pF

Maximum Operating Temperature

+175 °C

Energy Rating

22.3mJ

Automotive Standard

AEC-Q101

Country of Origin

China