Technical documents
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Collector Emitter Voltage
-30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
-10 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
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P.O.A.
2000
P.O.A.
2000
Technical documents
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Collector Emitter Voltage
-30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
-10 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C