onsemi BDV65BG NPN Transistor, 10 A, 100 V, 3-Pin TO-218

RS Stock No.: 184-4189Brand: onsemiManufacturers Part No.: BDV65BG
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Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

10 A

Maximum Collector Emitter Voltage

100 V

Package Type

TO-218

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Collector Base Voltage

100 V dc

Maximum Emitter Base Voltage

5 V dc

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

10.53 x 4.83 x 15.75mm

Country of Origin

China

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P.O.A.

onsemi BDV65BG NPN Transistor, 10 A, 100 V, 3-Pin TO-218

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

P.O.A.

onsemi BDV65BG NPN Transistor, 10 A, 100 V, 3-Pin TO-218
Stock information temporarily unavailable.

30

Available in multiples of 30
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

Technical documents

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

10 A

Maximum Collector Emitter Voltage

100 V

Package Type

TO-218

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Collector Base Voltage

100 V dc

Maximum Emitter Base Voltage

5 V dc

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

10.53 x 4.83 x 15.75mm

Country of Origin

China